单崇新_百度百科
单崇新，男，1977年生，河南长垣人。中科院“百人计划”入选者，中国科学院长春光学精密机械与物理研究所研究员，博士，博士生导师，II-VI族宽禁带光电子材料与器件方面学科带头人。主要研究方向为ZnO基半导体材料及光电器件，例如半导体光电探测器、发光二极管、激光器件、太阳能电池等。到目前为止发表SCI学术论文100余篇， 其中影响因子大于3.0的论文30余篇。
单崇新教育经历
1999年 本科毕业于武汉大学
2004年 博士毕业于中国科学院长春光学精密机械与物理研究所
单崇新工作经历
2004年3月到2006年1月 香港中文大学 博士后
2006年1月到2008年3月 英国诺丁汉大学 博士后
2008年4月至今 中国科学院长春光学精密机械与物理研究所 中科院“百人计划”，研究员，博士生导师
单崇新研究方向
● ZnO基光电子材料与器件
● 光电探测材料与器件
● 表面等离子体在发光器件上的应用
● 原子层沉积设备与材料制备
单崇新项目资助
目前主持中国科学院百人计划项目1项，国家自然科学基金项目2项，中国科学院装备研制项目1项；以负责人身份入选吉林省科技创新团队，参与973项目1项。
2015年11月，入选2016年度河南省“中原学者”。[1]
单崇新文章著作
1. P. N. Ni, C. X. Shan*, S. P. Wang, B. H. Li, Z. Z. Zhang, D. X. Zhao, L. Liu, D. Z. Shen, Enhanced Responsivity of Highly Spectrum-Selective Ultraviolet Photodetectors, J. Phys. Chem. C 116, ).
2. H. Zhu, C. X. Shan*, B. H. Li, Z. Z. Zhang, D. Z. Shen, K. L. Choy, Low-threshold electrically pumped ultraviolet laser diode, J. Mater. Chem. 21 (9), 2848 - ).
3. F. Sun, C. X. Shan*, B. H. Li, Z. Z. Zhang, D. Z. Shen, Z. Y. Zhang, D. Fan, A reproducible route to p-ZnO films and their application in light-emitting devices, Opt. Lett. 36 (4), 499 - 501 (2011).
4. H. Zhu, C. X. Shan*, B. H. Li, Z. Z. Zhang, B. Yao, D. Z .Shen, Deep-ultraviolet light-emitting device realized via a hole-multiplication process, Appl. Phys. Lett. 99, 11).
5. H. Zhu, C. X. Shan*, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. H. Hou, K. L. Choy, Low-threshold electrically pumped random lasers, Adv. Mater. 22, ).
6. H. Zhu, C. X. Shan*, L. K. Wang, Y. Yang, J. Y. Zhang, B. Yao, D. Z. Shen, X. W. Fan, A route to improved extraction efficiency of light-emitting diodes, Appl. Phys. Lett. 96, 10).
7. J. S. Liu, C. X. Shan*, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z .Shen, X. W. Fan, High responsivity ultraviolet photodetector realized via a carrier-trapping process, Appl. Phys. Lett. 97, 10).
8. H. Zhu, C. X. Shan*, L. K. Wang, J. Zheng, J. Y. Zhang, B. Yao, D. Z. Shen, Metal-oxide-semiconductor structured MgZnO ultraviolet photodetector with high internal gain, J. Phys. Chem. C 114, 7169 - ).
9. H. Zhu, C. X. Shan*, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, Z. K. Tang, Ultralow-Threshold Laser Realized in Zinc Oxide, Adv. Mater. 21, ).
10. L. K. Wang, Z. G. Ju, J. Y. Zhang*, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, C. X. Shan*, Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices, Appl. Phys. Lett. 95, 09).
11. H. Zhu, C. X. Shan*, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes, J. Phys. Chem. C 113, 2980 - ).
12. Z. G. Ju, C. X. Shan, C. L. Yang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, X. W. Fan, Phase stability of cubic Mg0.55Zn0.45O thin film studied by continuous thermal annealing method, Appl. Phys. Lett. 94, 09).
13. D. Y. Jiang, C. X. Shan, J. Y. Zhang, Y. M. Lu, B. Yao, D. X. Zhao, Z. Z. Zhang, X. W. Fan, D. Z. Shen, Schottky Barrier Photodetectors Based on Mg0.40Zn0.60O Thin Films, Crystal Growth Des. 9, 454 (2009).
14. H. Zhu, C. X. Shan*, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes, J. Phys. Chem. C 113, ).
15. H. Zhu, C. X. Shan*, B. Yao, B. H. Li, J. Y. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction, J. Phys. Chem. C 112, 20546 - 2).
16. C. X. Shan, Z. Liu, S. K. Hark, Temperature dependent photoluminescence study on phosphorus doped ZnO nanowires, Appl. Phys. Lett. 92, 08).
．163[引用日期]
企业信用信息f(x)=max{g(x),h(x)}是什么意思？_百度知道朱勤生_百度百科
朱勤生，研究员，博士生导师。1951年5月生。1978年毕业于南京工学院（东南大学），后考入南京大学物理系攻读硕士研究生，后留校任教。经选拔，于1983年赴日本名古屋大学学习，1986年获硕士学位，1989年获博士学位。在日本期间，主要从事红光InGaAsP/GaAs材料光电特性和蓝紫光GaN材料的物理特性研究。1991年回国，并一直在中国科学院半导体研究所长期从事宽禁带半导体低维结构材料与器件物理研究工作。1995年至2000年曾任表面国家重点实验室（半导体所区）实验室主任。2002年作为学术带头人加入半导体材料科学重点实验室MOCVD组（现更名为超宽禁带半导体材料研究组）。2011年5月退休后返聘为学术顾问。日下午5时30分许在家中身亡。
朱勤生科研贡献
在中科院半导体所任研究员期间，共发表SCI收录学术110多篇，其中，国际一流杂志Phys.Rev.B 3篇，Appl.Phys.Lett. 28篇，J.Appl.Phys. 12篇,Crystal Growth & Design 1篇，CrystEng Comm 2篇；申请国家发明专利13项，其中获得授权5项；承担和参与科研项目15项，其中作为项目负责人主持科研项目4项，作为学术骨干参与项目11项。
在半导体材料科学重点实验室任博士生导师期间，共培养和指导研究生40多名。其中：博士36名，硕士4名。有1名博士研究生在APL杂志发表的文章被Nature杂志作为研究亮点重点评论报道，其发表在PRB杂志的文章还被美国应用物理协会（AIP）主办的“Virtue Journal”全文转载；有3名博士研究生获得中国科学院半导体研究所“五四青年学术交流会”一等奖；有4名博士研究生获得中国科学院研究生院优秀毕业生称号；有3名博士研究生获得中国科学院研究生院（后更名为中国科学院大学）三好学生标兵称号；有3名博士研究生获得中国科学院院长优秀奖。
朱勤生完成/在研主要项目
1、作为课题负责人主持的科研项目（合计4项）：　　（1）国家973项目“信息功能材料相关基础问题研究”子课题“低维结构材料物理特性研究”（年）；
（2）国家自然科学基金面上项目“高探测率垂直入射GaAs/AlGaAs多量子阱红外探测器”（年）；
（3）北京市自然科学基金项目“新型垂直入射GaAs/AlGaAs多量子阱红外探测器的研制”（年）；
（4）中科院半导体所所长基金项目“垂直入射GaAs/AlGaAs红外吸收的物理特性的研究”（年）。
2、作为学术骨干参与的科研项目（合计11项）
（1） 国家863重大专项“高效半导体照明关键材料技术研发”课题1“大尺寸Si衬底GaN基LED外延生长、芯片制备及封装技术”子课题。（13.12）
（2） 国家863项目“生长温度周期调制MOCVD法制备ZnO材料及发光器件研究”（10.12）
（3） 国家863项目”硅基氮化镓厚膜衬底材料制备研究“（10.12）
（4） 国家973项目”全组分可调III族氮化物半导体光电功能材料及其器件应用”，课题5“自支撑AlN衬底材料及AlN/蓝宝石复合衬底材料的制备”子课题（15.8）
（5） 国家973项目“半导体光电信息功能材料的基础研究”子课题:“大失配异质体系材料衬底研究”（11.9）
（6） 国家自然科学基金重大研究计划“面向能源的光电转换材料”培育项目“利用玻璃衬底制备新型InGaN 基量子点全光谱太阳电池材料研究”（5.12）
（7） 国家自然科学基金面上项目“生长温度周期调制的MOCVD法制备p型ZnO薄膜研究”（10.12）
（8） 国家自然基金面上项目“大尺寸GaN厚膜衬底材料自剥离制备研究”（3.12）
（9） 国家自然基金面上项目“硅基无应变InGa(Al)N/InGaAlN量子阱的研究”（06.12）
（10） 中国科学院科研装备研制项目“氮化镓专用复合型MOCVD-HVPE生长设备”（07.11）
（11） 院地合作技术咨询项目“协助杭州钱宏光电科技有限公司组建半导体材料生产线技术咨询项目”（10.11）
朱勤生代表性论著
一、发表学术论文（合计117篇）
[1]Q.S.Zhu, S.M.Mou,X.C.Zhou and Z.T.Zhong, Determination of the condution band offset of a singleAlGaAs barrier layer using deep level transient spectroscopy,Appl. Phys. Lett.,62 (.
[2]Q.S.Zhu, K.Hiramatsu,N.Sawaki, I.Akasaki and X.N.Liu, Field effect on thermal emission from the 0.40eV electron level in InGaP,J.Appl.Phys.,73 (.
[3]Q.S.Zhu, K.Hiramatsu,N.Sawaki, I. Akasaki and X.N.Liu, Deep center scattering potential in InGaP,J. Appl. Phys.,76 (.
[4]Q.S.Zhu, Z.T.Zhong, L.W.Lu, C.F.Li, Determination of the subband energy in the V - shaped potentialwell of d - doped potential well of d - doped GaAs by deep level transientspectroscopy,Appl. PhysLett.,65(.
[5]Q.S.Zhu, Z.Q.Gu, Z.T.Zhong,Z.Q.Zhou and L.W.Lu, Determination of the X conduction subband energies in typeII GaAs/AlAs /GaAs quantum well by deep level transient spectroscopy ,Appl. Phys Lett.67 (.
[6]Q.S.Zhu, X.B.Wang,Q.G.Du, Z.T.Zhong and Y.R.Xing, Infrared absorption due totwo-dimensional-electron-gas collective excitation in GaAs/AlxGa1-xAsmultiple-quantum-well Structures,Phys.Rev. B,52 (.
[7]Q.S.Zhu, X.B.Wang, Z.T.Zhong,X.C. zhou, Y.P.He, Z.P.Cao, G.Z.Zhang, J. Xiao, X.H.Sun, H.Z.Yang, Q.G.Du ，Intrasubbandand intersubband transitions in lightly and heavily doped GaAs /AlxGa1-xAsmultiple quantum wells,Phys.ReV. B. , 57 (-12396
[8]Q.S.Zhu, N.Sawaki, Nitrogenvacancy scattering in n-GaN grown by MOVPE,Appl.Phys. Lett. , 76 (-1596
[9]Q.S.Zhu, H.Nagai, Y. Kawaguchi,K.Hiramatsu, and N.Sawaki, Effect of thermal annealing on hole trap levels inMg-doped GaN grown by metal-organic vaper phase epitaxy,J.Vac.Sci. Technol. A, 18 (7
[10]Q.S.Zhu, H.Matsushima, K.Hiramatsu,N.Sawaki, Cathodoluminescence on GaN hexagonal pyramids on submicrondot-patterns via selective MOVPE,AppliedSurface Science, 167 (1
[11]Q.S.Zhu, Y.P.He, Z.T.Zhong,X.H.Sun and K.Hiramatsu, Infrared absorption efficiency in AlAs/AlxGa1-xAstype II multiple-Quantum-well Structure grown on (211) GaAs substrate,Phys. Stat. Sol. (b), 217(0
[12]Qingsheng Zhu, Ju Wu, ChengmingLi, Zhanguo Wang, Conduction and valence band discontinuities in some newsemiconductou heterojunctions,Journalof Nanoscience and nanotechnology,11,, 2011(综述文章)
[13] H.Nagai,Q.S.zhu, Y.Kawaguchi,K.Hiramatsu, and N. Sawaki，Holetrap levels in Mg-doped GaN grown by MOVPE，Appl. Phys. Lett.,73 (-2026
[14] Y.P.He,Q.S.Zhu,Z.T.Zhong, G.Z.Zhang, J.Xiao, Z.P.Cao, X.H.Sun, H.Z. Yang ，Line widthof the infrared absorption spectra due to bound-to-continuum transition inGaAs/AlxGa1-xAs multiple quantum well structures，Appl.Phys. Lett., 73 (-1133
[15] Zhen Chen, Da-Cheng Lu,Peide Han, Xianglin Liu, Xiaohui Wang, Yufeng Li, Hairong Yuan, Yuan Lu, LidaBing,Qinsheng Zhu, andZhanguo Wang , The structure and current voltageof multi-sheet InGaN quantum dotsgrown by a new method,J.Cryst. Growth，243(
[16] Zhen Chen, Hairong Yuan,Da-Cheng Lu, Xuehao Sun, Shouke Wan, Xianglin Liu, Peide Han, Xiaohui Wang,QinshengZhu, and Zhanguo Wang, Nitrogen vacancy scattering in GaN grownby metal-organic vapor phase epitaxy,Solid-StateElectronics,46(74
[17] B. Z. Qu,Q.S. Zhu, X. H. Sun, S. K. Wan, and Z. G. Wang, Photoluminescenceof Mg-doped GaN grown by metalorganic chemical vapor deposition,J. Vac. Sci. Technol. A,21（1
[18] Baozhuang Qu, Zhen Chen, Dacheng Lu, Peide Han,Xianglin Liu,Xiaohui Wang, Du Wang,Qinsheng Zhu, ZhanguoWang, Structure characteristics of InGaN quantumdots fabricatedby passivation and lowtemperature method,J. Cryst.Growth，252(
[19] Qu Baozhuang ,ZhuQinsheng, Chen Zhen, Lu Dacheng, Han Peide, Liu Xianglin, WangXiaohui, Sun Xuehao, Li Yufeng, Lu Yuan, Li Dabing, Wang Zhanguo(曲宝壮，朱勤生，陈振，陆大成，韩培德，刘祥林，王晓晖，孙学浩，李昱峰，陆沅，黎大兵，王占国),Structure and I-V characteristics of InGaN quantumdots grown by a new method(新工艺生长的InGaN量子点的结构与电学性质研究),Journal of Functional Materials and devices(功能材料与器件学报),l9(
[20] Y. Lu, G. W. Cong, X. L. Liu,D. C. Lu,Q. S. Zhu, X. H. Wang,J. J. Wu, Z.G. Wang,Growth of crack-free GaN films on Si(111) substrate byusing Al-rich AIN buffer layer,J.Appl. Phys., 96(9) (-4988
[21] J. M. Li, Y. W. Lu, D. B.Li, X. X. Han,Q. S. Zhu, X. L.Liu, Z. G. Wang, Effect of spontaneous and piezoelectric polarization onintersubband transition in AlxGa1-xN/GaN quantum well ,Journal of Vacuum Science andTechnology B, 22-6 (-2573
[22] Xiuxun Han, Zhen Chen,Dabing Li, Jiejun Wu, Jiemin Li, Xuehao Sun, Xianglin Liu, Peide Han, XiaohuiWang,Qinsheng Zhu, ZhanguoWang, Structural and optical properties of 3D growth multilayer InGaN/GaNquantum dots by metalorganic chemical vapor deposition,J. Cryst. Growth，266(
[23] Jiejun Wu, Dabing Li, YuanLu, Xiuxun Han,Jiemin Li,Hongyuan Wei, Tingting Kang, Xiaohui Wang, Xianglin Liu,QinshengZhuand ZhanguoWang , Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrateby metalorganic chemical vapor deposition ,J. Cryst. Growth，273 (
[24] Xiuxun Han,Dabing Li, Hairong Yuan, XuehaoSun, Xianglin Liu, Xiaohui Wang，QinshengZhu, Zhanguo Wang , Dislocation scattering in a two-dimensionalelectron gas of an AlxGa1-xN/GaN heterostructure ,Physica Status Solidi (b) ,241 (-3008
[25] G.W.Cong, H.Y.Wei,P.F.Zhang, W.Q.Peng, J.J.Wu, X.L.Liu, C.M.Jiao,W.G.Hu,Q.S.Zhu,Z.G.Wang, One-step growth of ZnO from films to vertically well-aligned nanorodsand the morphology-dependent raman scattering,Appl. Phys. Lett., 87 (-231905
[26] Han, Xiuxun Li, J Wu,J Cong, G Liu, XZhu, Qinsheng; Wang,Zhanguo, Intersubband optical absorption in quantum dots-in-a-wellheterostructures,J. Appl.Phys., 98（5）（
[27] Jiejun Wu, Xiuxun Han,Jiemin Li, Dabing Li, Yuan Lu, Hongyuan Wei, Guangwei Cong, Xianglin Liu,QinshengZhuandZhanguo Wang, Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloyas compliant interlayer by metalorganic chemical vapor deposition ,J. Cryst. Growth，279 (
[28] J.M. Li, X.X. Han, J.J. Wu,X.L. Liu,Q.S. Zhuand Z.G. Wang, Origin of the blueshiftin the infrared absorbance of intersubband transitions in AlxGa1-xN/GaN multiple quantum wells,Physica E:Low-dimensionalsystems & nanostructures,25(1
[29] Z. Chen, S.J. Chua, P.D.Han, X.L. Liu, D.C. Lu,Q.S. Zhu, Z.G. Wang,S. Tripathy , Luminescence properties of multi-layer InGaN quantum dots grownon C- and R-plane sapphire substrates ,PhysicaE: Low-dimensional systems & nanostructures,27 (8
[30] Xiuxun Han, Jiemin Li,Jiejun Wu, Guangwei Cong,. Xianglin Liu,Qinsheng Zhu,Zhangguo Wang , Theoretical analysisof gate voltage-controlled subband states in an AlxGa1-xN/GaNheterostructure,Physica E:Low-dimensional systems & nanostructures,28（3）（6
[31] J.M.Li, Y.W. Lu, X.X. Han,J.J. Wu, X.L. Liu,Q.S. Zhuand Z.G. Wang, Theoreticalinvestigation of intersubband transition in AlxGa1-xN/GaN/AlyGa1-yNstep quantum well ,Physica E:Low-dimensionalsystems & nanostructures,28(1
[32] XiuXun Han, Jiemin Li,Jiejun Wu, Xiaohui Wang, Dabing Li, Xianglin Liu, Peide Han,QinshengZhu, Zhanguo Wang, Effects of different modified underlayersurface on growth and optical properties of InGaN quantum dots,Vacuum,77(
[33] Xiuxun Han, Jiejun Wu,Jiemin Li, Guangwei Cong, Xianglin Liu,Qinsheng Zhu, ZhanguoWang, Photoluminescence investigation of two-dimensional electron gas in anundoped AlxGa1-xN/GaN heterostructure,ChinesePhysics Letter, 22 (8)（-2099
[34] G. W. Cong, W. Q. Peng, H.Y. Wei, X. X. Han, J. J. Wu, X. L. Liu,Q. S. Zhu, Z. G. Wang,J. G. Lu, Z. Z. Ye, L. P. Zhu,H.J. Qian, R. Su, C. H. Hong, J. Zhong, K. Ibrahim, T. D. Hu, Comparison ofvalence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnOfilms ,Appl. Phys. Lett.88(-062112
[35] G. W. Cong, W. Q. Peng, H.Y. Wei, X. L. Liu, J. J. Wu, X. X. Han,Q. S. Zhu, Z. G. Wang,Z. Z. Ye, J. G. Lu, L. P. Zhu, H. J. Qian, R. Su,C. H. Hong, J. Zhong, K. I.brahim, T. D. Hu , Aluminium Doping Induced Enhancement of p-d Coupling in ZnO,J. Phys.: Condens. Matter. 18, (2006)
[36] T. T. Kang, X. L. Liu, R. Q.Zhang, W. G. Hu, G. W. Cong, F. A. Zhao,Q. S. Zhu, InN nanoflowers grown by metal organic chemical vapor deposition,Appl. Phys. Lett.89(
[37] Jiejun Wu, Jiemin Li,Guangwei Cong, Hongyuan Wei, Panfeng Zhang, Weiguo Hu, Xianglin Liu,QinshengZhu, and Zhanguo Wang , Temperature dependence of nano-scaleindium clusters and their effects on luminescence properties in InAlGaNquaternary alloys on Si(111) substrates,Nanotechnology, 17 (-1254
[38] Jiejun Wu, Xiuxun Han ,Jiemin Li, Hongyuan Wei, Guangwei Cong, Xianglin Liu,QinshengZhu, Zhanguo Wang, Quanjie Ji, Liping Guo, Tiandou Hu, HuanhuaWang, Crack control in GaN grown on silicon (111) using In dopedlow-temperature AlGaN interlayer by metalorganic chemical vapor deposition ,Optical Materials，28（10） (-1231
[39] Riqing Zhang, Panfeng Zhang,Tingting Kang, Haibo Fan, Xianglin Liu, Shaoyan Yang,Hongyuan Wei,QinshengZhu, Zhanguo Wang , Determination of the valence band offset ofwurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy,Appl. Phys. Lett.91, 162104 （2007）
[40] J. M. Li , K. Y. Qian,Q.S. Zhu, Z. G. Wang , Intrasubband and intersubband transitionsin GaAs/AlGaAs multiple quantum wells,Appl.Phys. Lett. 90(.
[41] Ting-Ting Kang，R. Q.Zhang, W. G. Hu, G. W. Cong, F. A. Zhao, X. X. Han, S. Y. Yang, X. L. Liu,Q.S. Zhu, Z. G. Wang, Plasmons in vertically coupled InAs/GaAsquantum dots,Phys. Rev. B 76, 07),（被美国AIP主办的VirtueJournal杂志全文转载）
[42] Jiejun Wu, Guoyi Zhang,Xianglin Liu,Qinsheng Zhu, ZhanguoWang, Quanjie Jia, Liping Guo, Effect of an indium-doped barrier on enhancednear-ultraviolet emission from InGaN/AlGaN:In multiple quantum wells grown onSi(111) ,Nanotechnology, 18 (
[43] Wei HY, Cong GW, Zhang PF,Hu WG, Wu JJ,Jiao CM, Liu XL,ZhuQS, Wang ZG, Combined structure of ZnO vertical well-alignednanorods and net-like structures on AIN/sapphire,J. Cryst. Growth，306(1) ,12-15 (2007)
[44] P F Zhang, X L Liu, H Y Wei,H B Fan, Z M Liang, P Jin, S Y Yang, C M Jiao,QS Zhuand Z GWang, Rapid thermal annealing properties of ZnO films grown using methanol asoxidant,J. Phys. D: Appl.Phys. 40 (-6013.
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[46] Fan HB, Yang SY, Zhang PF,Wei HY, Liu XL, Jiao CM,Zhu QS, Chen YH，Wang ZG,Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films byphotoluminescence and x-ray photoelectron spectroscopy,Chinese Physics Letters,24, (2007)
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[93] Song Ya-Feng,Lu Yan-Wu;WenW Liu Xiang-L Yang Shao-Yan,Zhu Qin-ShengWang Zhan-Guo, Plasmons in a free-standingnanorod with a two-dimensional parabolic quantum well caused by surface states,Chin. Phys. B,12)
[94] Guipeng Liu, Ju Wu1, YanwuLu, Guijuan Zhao, Chengyan Gu, Changbo Liu, Ling Sang, Shaoyan Yang, XianglinLiu,Qinsheng Zhu, andZhanguo Wang,Two-dimensional electron gas mobility limited by barrier and quantumwell thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells,Appl. Phys. Lett.,100,12);
[95] Guipeng Liu, Ju Wu, GuijuanZhao, Shuman Liu, Wei Mao, Yue Hao, Changbo Liu, Shaoyan Yang, Xianglin Liu,QinshengZhu, and Zhanguo Wang, Impact of the misfit dislocations ontwo-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures,Appl. Phys. Lett.,100, 12)
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[97] SANG Ling, WANG Jun, SHIKai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan,ZHUQin-Sheng, WANG Zhan-Guo,The Growth of Semi-Polar ZnO(10(1)over-bar1) on Si (111) Substrates Using a Methanol Oxidant byMetalorganic Chemical Vapor Deposition,Chin.Phys, Lett., 29(2
[98] Gu Cheng-Yan, Liu Gui-Peng,Shi Kai, Song Ya-Feng, Li Cheng-Ming,, Liu Xiang-Lin, Yang Shao-Yan,ZhuQin-Sheng,WangZhan-Guo,Spacer layer thickness fluctuation scattering in a modulation-dopedAl(x)Ga(1-x)As /GaAs/ Al(x)Ga(1-x)As quantum well,Chin. Phys. B,2,12)
[99] Zhao Guijuan,Li zhiwei, WeiHongyuan, Liu Guipeng, Liu Xianglin, Yang Shaoyan,ZhuQinsheng, Wang Zhanguo，Growth and characterization of an a-planeInxGa1-xN on a r-plane sapphire，Chin.Phys, lett.,29(2
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[101] Bing Liu, Yanwu Lu, YanHuang, Guipeng Liu,Qinsheng Zhu, andZhanguo Wang, “Interfacial misfit dislocation scattering effect intwo-dimensional electron gas channel of GaN heterojunction”,Physics Letters A, 376, ).
[102] Dong Ji, Bing Liu, YanwuLu, Guipeng Liu,Qinsheng Zhu, andZhanguo Wang, “Polarization-induced remote interfacial charge scattering inAl2O3/AlGaN/GaN double heterojunction high electron mobility transistors”,Appl. Phys. Lett. ,100, 12)
[103] Dong Ji, Yanwu Lu, BingLiu, Guipeng Liu,Qinsheng Zhu, Zhanguo Wang, Theoreticalcalculation of the interfacial charge-modulated two-dimensional electron gasmobility in Al2O3/AlGaN/GaN double heterojunction high electron mobilitytransistors,Solid StateCommuincations,153, 53,(2012)
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[106] Huijie Li, Guipeng Liu,Hongyuan Wei, Chunmei Jiao, Jianxia Wang, Heng Zhang, Dong Dong Jin, YuxiaFeng, Shaoyan Yang, Lianshan Wang,Qinsheng Zhu, Zhan-GuoWang，Scatteringdue to Schottky barrier height spatial fluctuation on two dimensional electrongas in AlGaN/GaN high electron mobility transistors，Appl.Phys. Lett.103,13)
[107] Dong-Dong Jin, Chao Jiang,Guo-Dong Li, Liu-Wan Zhang, Tao Yang, Xiang-Lin Liu, Shao-Yan Yang,Qin-ShengZhu, Zhan-Guo Wang, Scattering due to anisotropy of ellipsoidquantum dots in GaAs/InGaAs single quantum well,J. Appl. Phys., 113, 3)
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[110] Changbo Liu, Shaoyan Yang*,Kai Shi, Guipeng Liu, Heng Zhang, Dongdong Jin, Chengyan Gu, Guijuan Zhao, LingSang, Xianglin Liu,Qinsheng Zhu, ZhanguoWang, Two dimensional electron gas mobility limited by scattering of quantumdots with indium composition transition region in quantum wells,Physica E:Low-dimensional Systems andNanostructures, 52，150-154（2013）
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[112] ZHAO Gui-Juan(赵桂娟)，YANGShao-Yan(杨少延)，LIUGui-Peng(刘贵鹏)，LIUChang-Bo (刘长波)，SANG Ling(桑玲)，GUCheng-Yan(谷承艳)，LIUXiang-Lin(刘祥林)，WEIHong-Yuan(魏鸿源)，ZHUQin-Sheng(朱勤生)，WANGZhan-Guo(王占国)， StrainDistributions in Non-Polar a-Plane InxGa1-xN Epitaxial Layers on r-PlaneSapphire Extracted from X-Ray Diffraction，CHIN. PHYS. LETT.，Vol. 30,No. 9 (
[113] Wang Jian-Xia(王建霞), YangShao-Yan(杨少延),Wang Jun(王俊),Liu Gui-Peng(刘贵鹏),Li Zhi-Wei(李志伟),Li Hui-Jie(李辉杰),Jin Dong-Dong(金东东),Liu Xiang-Lin(刘祥林),ZhuQin-Sheng(朱勤生),and Wang Zhan-Guo(王占国),Electron mobility limited by surface and interface roughness scattering inAlxGa1-xN/GaN quantum wells,Chin.Phys. B, 22( 7) ,3)
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二、授权发明专利（5项）
1、 张志成，杨少延，黎大兵，陈涌海，朱勤生，王占国，发明专利：制备低温超薄异质外延用柔性衬底的方法，专利号：ZL，申请日期: , 授权公告日期：。
2、 张志成，杨少延，黎大兵，刘祥林，陈涌海，朱勤生，王占国，发明专利：一种氢致解耦合的异质外延用柔性衬底，专利号：ZL，申请日期：，授权公告日：
2. 郑高林;杨安丽;宋华平;郭严;魏鸿源;刘祥林;朱勤生;杨少延;王占国 ，发明专利：利用非极性ZnO缓冲层生长非极性InN薄膜的方法 ，专利号.3，申请日：，授权日：
3. 郭严，宋华平，郑高林，魏鸿源，刘祥林，朱勤生，杨少延，王占国，发明专利：一种生长高质量富In组分InGaN薄膜材料的方法，专利号：.3，申请日：，授权日：
4. 时凯，刘祥林，魏鸿源，焦春美，王俊，李志伟，宋亚峰，杨少延，朱勤生，王占国,发明专利：利用温度周期调制生长氧化锌材料的方法，专利号：ZL..2，申请日：，授权日：
5. 桑玲，王俊，魏鸿源，焦春美，刘祥林，朱勤生，杨少延，王占国，发明专利：一种非极性蓝宝石衬底上生长水平排列氧化锌纳米线的方法，专利号：ZL .8，申请日：，授权日：
朱勤生悼词
北京诗词协会王绵和先生沉痛悼念朱勤生先生特赠挽诗一首：
京城天地动哀情，
亲友宾朋洒泪行。
希望之星今陨落，
导师功绩史留名。
朱君遗憾归西去，
旖旎光辉耀眼明。
勤生敬业精神在，
激励他人大器成。
生前同事敬赠挽联一副：
桃李凝霜悼良工 风泽雨露　　杜鹃啼血念春心 山高水长
学生敬赠挽词一首：
清平乐-----纪念朱勤生老师
慈爱人生，
满纸教诲谆谆。
昔日音容忆犹在，
桌前不见旧人。
　　名利如幻如尘，
只为探知育人。
英魂独默悲苦，
遍种桃李满春。
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